Tranzystor bipolarny SiGe NPN 13 V 0,15 A HFE 110 TSFP BFP 650F H6327 4-Pin

Nr art.: 897-7286
Producent: Infineon
Nr części producenta: BFP 650F H6327

Opis produktu

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low

Zapytaj o produkt: handlowy@euroimpex.krakow.pl