Tranzystor bipolarny SiGe NPN 4,1 V 0,05 A 45 GHz HFE 110 SOT-343 BFP640ESDH6327 4-Pin

Nr art.: 827-5154
Producent: Infineon
Nr części producenta: BFP640ESDH6327

Opis produktu

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low

Zapytaj o produkt: handlowy@euroimpex.krakow.pl