Tranzystor bipolarny SiGe NPN 4,9 V 0,045 A 45 GHz HFE 160 SOT-343 BFP740ESDH6327 4-Pin

Nr art.: 827-5126
Producent: Infineon
Nr części producenta: BFP740ESDH6327

Opis produktu

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low

Zapytaj o produkt: handlowy@euroimpex.krakow.pl